PLECS 1.3 Online Help

IGBT with Diode

Purpose

Ideal IGBT with ideal anti-parallel diode.

Library

Switches

Description

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This model of an Insulated Gate Bipolar Transistor has an integrated anti-parallel diode. The diode is usually required in AC applications such as voltage source inverters.

Dialog Box

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Width
The width of the component. This affects both the width of the electrical ports and the width of the gate input signal. The default is 1.
Initial conductivity
Initial conduction state of the device. The device is initially blocking if the parameter evaluates to zero, otherwise it is conducting. This parameter may either be a scalar or a vector with the width of the component. The default value is 0.

Probe Signals

Device voltage
The voltage measured between collector/cathode and emitter/anode. The device voltage can never be negative.
Device current
The current through the device. The current is positive if it flows through the IGBT from collector to emitter and negative if it flows through the diode from anode to cathode.
Device conductivity
Conduction state of the internal switch. The signal outputs 0 when the device is blocking, and 1 when it is conducting.