MOSFET with Diode
Purpose
Ideal MOSFET with ideal anti-parallel diode.
Library
Switches
Description
This model of a Metal Oxide Semiconductor Field Effect Transistor has an
integrated anti-parallel diode. The diode is usually included in power MOSFET
packages.
Dialog Box
-
Width
- The width of the component. This affects both the width of the electrical
ports and the width of the gate input signal. The default is 1.
-
Initial conductivity
- Initial conduction state of the device. The device is initially
blocking if the parameter evaluates to zero, otherwise it is conducting. This
parameter may either be a scalar or a vector with the width of the component.
The default value is 0.
Probe Signals
-
Device voltage
- The voltage measured between drain and source. The device
voltage can never be negative.
-
Device current
- The current through the device. The current is positive if it flows
through the MOSFET from drain to source and negative if it flows through the
diode from source to drain.
-
Device conductivity
- Conduction state of the internal switch. The signal outputs
0 when the device is blocking, and 1 when it is conducting.