IGBT with Diode
Purpose
Ideal IGBT with ideal anti-parallel diode.
Library
Switches
Description
This model of an Insulated Gate Bipolar Transistor has an integrated anti-parallel
diode. The diode is usually required in AC applications such as voltage source
inverters.
Dialog Box
-
Width
- The width of the component. This affects both the width of the electrical
ports and the width of the gate input signal. The default is 1.
-
Initial conductivity
- Initial conduction state of the device. The device is initially
blocking if the parameter evaluates to zero, otherwise it is conducting. This
parameter may either be a scalar or a vector with the width of the component.
The default value is 0.
Probe Signals
-
Device voltage
- The voltage measured
between collector/cathode and emitter/anode. The device voltage can never be
negative.
-
Device current
- The current through the device. The current is positive if it flows
through the IGBT from collector to emitter and negative if it flows through the
diode from anode to cathode.
-
Device conductivity
- Conduction state of the internal switch. The signal outputs
0 when the device is blocking, and 1 when it is conducting.