PLECS 1.3 Online Help

MOSFET with Diode

Purpose

Ideal MOSFET with ideal anti-parallel diode.

Library

Switches

Description

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This model of a Metal Oxide Semiconductor Field Effect Transistor has an integrated anti-parallel diode. The diode is usually included in power MOSFET packages.

Dialog Box

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Width
The width of the component. This affects both the width of the electrical ports and the width of the gate input signal. The default is 1.
Initial conductivity
Initial conduction state of the device. The device is initially blocking if the parameter evaluates to zero, otherwise it is conducting. This parameter may either be a scalar or a vector with the width of the component. The default value is 0.

Probe Signals

Device voltage
The voltage measured between drain and source. The device voltage can never be negative.
Device current
The current through the device. The current is positive if it flows through the MOSFET from drain to source and negative if it flows through the diode from source to drain.
Device conductivity
Conduction state of the internal switch. The signal outputs 0 when the device is blocking, and 1 when it is conducting.